MULTI-DAY DYNAMIC STORAGE OF HOLES AT THE ALAS/GAAS INTERFACE

被引：15

作者：

QIAN, QD

MELLOCH, MR

COOPER, JA

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 11期

关键词：

D O I：

10.1109/EDL.1986.26490

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：607 / 609

页数：3

共 11 条

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[3]

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[6] SELECTIVELY DOPED HETEROSTRUCTURE FREQUENCY-DIVIDERS [J].

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FEUER, MD ;

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[7]

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[8]

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[9] PHOTOSENSITIVE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AIGAAS/GAAS HETEROSTRUCTURES [J].

QIAN, QD ;

MELLOCH, MR ;

COOPER, JA .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :638-640

[10] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J].

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MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1015-1027

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