DEFECTS IN SILICON SUBSTRATES

被引：160
作者：
HU, SM [1 ]
机构：
[1] IBM CORP, DIV SYST PROD, HOPEWELL JUNCTION, NY 12533 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 01期
关键词：
D O I：
10.1116/1.569117
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：17 / 31
页数：15
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共 173 条
[1]   ETCH PITS OBSERVED IN DISLOCATION-FREE SILICON CRYSTALS [J].
ABE, T ;
SAMIZO, T ;
MARUYAMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (05) :458-&
[2]  
ABE T, 1973, SEMICONDUCTOR SILICO, P95
[3]  
AKKERMAN AF, 1975, SOV PHYS SEMICOND+, V9, P1212
[4]   EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON [J].
ALLEN, WG .
SOLID-STATE ELECTRONICS, 1973, 16 (06) :709-717
[5]   ORIENTATION DEPENDENCE OF DIFFUSION OF BORON IN SILICON [J].
ALLEN, WG ;
ANAND, KV .
SOLID-STATE ELECTRONICS, 1971, 14 (05) :397-&
[6]   EFFECT OF CARBON ON LATTICE PARAMETER OF SILICON [J].
BAKER, JA ;
TUCKER, TN ;
MOYER, NE ;
BUSCHERT, RC .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4365-&
[7]   DIFFUSION PIPES IN SILICON NPN STRUCTURES [J].
BARSON, F ;
HESS, MS ;
ROY, MM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) :304-&
[8]  
BATAVIN VV, 1970, SOV PHYS CRYSTALLOGR, V15, P100
[9]  
BATAVIN VV, 1967, FIZ TVERD TELA+, V8, P2005
[10]  
BATAVIN VV, 1970, SOV PHYS SEMICOND+, V4, P641
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