HYDROGEN CONTENT OF SILICON AND THERMAL-OXIDATION INDUCED MOISTURE GENERATION IN AN INTEGRATED RAPID THERMAL-PROCESSING REACTOR

The thermal oxidation of CZ-grown p (100) Si has been investigated in the temperature range of 400-1000-degrees-C in a rapid thermal processing reactor. In this study we present the results of investigating chemical analysis of the process gases entering and exiting the reactor. This arrangement enables us to investigate the effects of impurities intentionally doped into the process gas stream and to measure process generated products. In this article we discuss the results of measuring H-2 and H2O during preoxidation anneal in ultrahigh purity (UHP) Ar and during thermal oxidation in UHP O2. As a result of these analyses, we have experimentally determined the quantity of hydrogen contained in as received virgin CZ-grown p (100) Si wafers. This content is measured as 2.95 X 10(17) atoms/cc.