1ST-PRINCIPLES STUDY OF THE ATOMIC RECONSTRUCTIONS AND ENERGIES OF GA-STABILIZED AND AS-STABILIZED GAAS(100) SURFACES

被引:644
作者
QIAN, GX
MARTIN, RM
CHADI, DJ
机构
[1] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA
[2] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 11期
关键词
D O I
10.1103/PhysRevB.38.7649
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7649 / 7663
页数:15
相关论文
共 47 条
[1]   SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J].
ARTHUR, JR .
SURFACE SCIENCE, 1974, 43 (02) :449-461
[2]   PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].
BACHELET, GB ;
HAMANN, DR ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228
[3]   SEMICONDUCTOR SURFACE AND CRYSTAL PHYSICS STUDIED BY MBE [J].
BACHRACH, RZ .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1979, 2 (1-2) :115-144
[4]  
BRINGANS R, COMMUNICATION
[5]   GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD [J].
CEPERLEY, DM ;
ALDER, BJ .
PHYSICAL REVIEW LETTERS, 1980, 45 (07) :566-569
[6]   ATOMIC-STRUCTURE OF GAAS(100)-(2X1) AND GAAS(100)-(2X4) RECONSTRUCTED SURFACES [J].
CHADI, DJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :834-837
[7]   ANGLE-RESOLVED PHOTOEMISSION, VALENCE-BAND DISPERSIONS E(K-]), AND ELECTRON AND HOLE LIFETIMES FOR GAAS [J].
CHIANG, TC ;
KNAPP, JA ;
AONO, M ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1980, 21 (08) :3513-3522
[8]   BONDING DIRECTION AND SURFACE-STRUCTURE ORIENTATION ON GAAS (001) [J].
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :2841-2843
[9]  
COHEN ML, 1985, PHYS SCR T, V1, P5
[10]  
Dean J.A., 1979, LANGES HDB CHEM, P4