Applications of Field-Effect Transistor (FET)-Type Biosensors

被引：36
|
作者：
Park, Jeho [1 ]
Hoang Hiep Nguyen [1 ,2 ]
Woubit, Abdela [3 ]
Kim, Moonil [1 ,2 ,3 ]
机构：
[1] Korea Res Inst Biosci & Biotechnol KRIBB, BioNanotechnol Res Ctr, Daejeon 305333, South Korea
[2] Univ Sci & Technol UST, Dept Nanobiotechnol, Daejeon 305333, South Korea
[3] Tuskegee Univ, Coll Vet Med Nursing & Allied Hlth CVMNAH, Dept Pathobiol, Tuskegee, AL 36088 USA
来源：
APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY | 2014年 / 23卷 / 02期
基金：
美国国家卫生研究院;
关键词：
Field-effect transistor; Biosensor; MOSFET; ISFET; Nanowire FET;
D O I：
10.5757/ASCT.2014.23.2.61
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A field-effect transistor (FET) is one of the most commonly used semiconductor devices. Recently, increasing interest has been given to FET-based biosensors owing totheir outstanding benefits, which are likely to include a greater signal-to-noise ratio (SNR), fast measurement capabilities, and compact or portable instrumentation. Thus far, a number of FET-based biosensors have been developed to study biomolecular interactions, which are the key drivers of biological responses in in vitro or in vivo systems. In this review, the detection principles and characteristics of FET devices are described. In addition, biological applications of FET-type biosensors and the Debye length limitation are discussed.
引用
收藏
页码：61 / 71
页数：11
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