PHOTO-LUMINESCENCE TECHNIQUE FOR THE DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4
作者：
DUGGAN, G
SCOTT, GB
FOXON, CT
HARRIS, JJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 04期
关键词：
D O I：
10.1063/1.92331
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：246 / 248
页数：3
相关论文
共 50 条
[31]   ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT [J].
YAO, T ;
OGURA, M ;
MATSUOKA, S ;
MORISHITA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (03) :L144-L146
[32]   MINORITY-CARRIER LIFETIME AND PHOTOLUMINESCENT RESPONSE OF HEAVILY CARBON-DOPED GAAS GROWN WITH GAS SOURCE MOLECULAR-BEAM EPITAXY USING HALOMETHANE DOPING SOURCES [J].
DELYON, TJ ;
WOODALL, JM ;
KASH, JA ;
MCINTURFF, DT ;
BATES, RJS ;
KIRCHNER, PD ;
CARDONE, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02) :846-849
[33]   MINORITY-CARRIER DIFFUSION LENGTH MEASUREMENTS IN CDTE BY A PHOTOCURRENT TECHNIQUE [J].
LASTRASMARTINEZ, A ;
RACCAH, PM ;
TRIBOULET, R .
APPLIED PHYSICS LETTERS, 1980, 36 (06) :469-471
[34]   THE IMPORTANCE OF THE EXCITATION VOLUME FOR THE DETERMINATION OF THE MINORITY-CARRIER DIFFUSION LENGTH [J].
FIDDICKE, J ;
OELGART, G .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 87 (01) :383-389
[35]   STRONGLY POLARIZED BOUND EXCITON LUMINESCENCE FROM GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
SKOLNICK, MS ;
HARRIS, TD ;
TU, CW ;
BRENNAN, TM ;
STURGE, MD .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :427-429
[36]   PHOTO-ELECTROCHEMICAL DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN II-VI-COMPOUNDS [J].
GAUTRON, J ;
LEMASSON, P .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :332-337
[37]   DEEP STATES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
BLOOD, P ;
HARRIS, JJ .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :993-1007
[38]   SILICON AUTOCOMPENSATION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
BALLINGALL, JM ;
MORRIS, BJ ;
LEOPOLD, DJ ;
RODE, DL .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3571-3573
[39]   GAAS/GAALAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
WEIMANN, G ;
SCHLAPP, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) :C99-C99
[40]   EFFECT OF GAS-PHASE STOICHIOMETRY ON MINORITY-CARRIER DIFFUSION LENGTH IN VAPOR-GROWN GAAS [J].
ETTENBERG, M ;
OLSEN, GH ;
NUESE, CJ .
APPLIED PHYSICS LETTERS, 1976, 29 (03) :141-142
12345