PHOTO-LUMINESCENCE TECHNIQUE FOR THE DETERMINATION OF MINORITY-CARRIER DIFFUSION LENGTH IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

DUGGAN, G

SCOTT, GB

FOXON, CT

HARRIS, JJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.92331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：246 / 248

页数：3

共 14 条

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[8] ELECTRICAL CHARACTERIZATION OF SEMI-INSULATING GAAS - CORRELATION WITH MASS-SPECTROGRAPHIC ANALYSIS [J].

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[9] MINORITY-CARRIER LIFETIME AND INTERNAL QUANTUM EFFICIENCY OF SURFACE-FREE GAAS [J].

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