EFFECT ON NONIDEAL DELTA-DOPING LAYERS IN AL0.3GA0.7AS/IN0.3GA0.7AS PSEUDOMORPHIC HETEROSTRUCTURES

被引：0
|
作者：
DEAVILA, SF [1 ]
SANCHEZROJAS, JL [1 ]
HIESINGER, P [1 ]
GONZALEZSANZ, F [1 ]
CALLEJA, E [1 ]
KOHLER, K [1 ]
JANTZ, W [1 ]
MUNOZ, E [1 ]
机构：
[1] FRAUNHOFER INST APPL SOLID STATE PHYS,D-79108 FREIBURG,GERMANY
来源：
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993 | 1994年 / 136卷 / 136期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The depth profile of delta-doped layers is investigated by photoluminescence, Hall and DLTS measurements. A GaAs quantum well (QW) embedded into the Al0.3Ga0.7As barrier is delta-doped with Si. The spreading of Si out of the GaAs QW is deduced by comparing the measured charge with self-consistent calculations taking into account variations of the gaussian Si distribution profile and the ionization probability of Si-related DX centers. DLTS measurements confirm the presence of Si atoms in the Al0.3Ga0.7As barrier. It is shown that the influence of charge trapping on the channel conductivity can be neglected for standard MBE growth temperatures.
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页码：427 / 432
页数：6
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