Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si (100)

被引：94

作者：

StAmour, A ^{[1
]}

Liu, CW ^{[1
]}

Sturm, JC ^{[1
]}

Lacroix, Y ^{[1
]}

Thewalt, MLW ^{[1
]}

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY,BC V5A 1S6,CANADA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 26期

关键词：

D O I：

10.1063/1.115316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pseudomorphic Si1-x-yGexCy alloy layers on Si (100) with band-edge photoluminescence and without defect-related luminescence have been achieved. The photoluminescence was measured from 2 to 77 K and was used to make a direct measurement of the band gap shift as a function of strain reduction as C was added. Compared to the effect of just reducing Ge content, results show that as C is added, strain is reduced more efficiently than the band gap is increased. Furthermore, results imply that a fully strain-compensated Si1-x-yGexCy layer on Si (100) would have a band gap much less than that of Si, and suggest that initial C incorporation reduces the band gap of relaxed, unstrained Si1-x-yGexCy alloys. (C) 1995 American Institute of Physics.

引用

页码：3915 / 3917

页数：3

共 16 条

[1] BAND-EDGE AND DEEP-LEVEL PHOTOLUMINESCENCE OF PSEUDOMORPHIC SI1-X-YGEXCY ALLOYS [J].