MICROSCOPIC STRUCTURE OF THE GAAS(001)-(6X6) SURFACE DERIVED FROM SCANNING-TUNNELING-MICROSCOPY

被引：28

作者：

KUBALL, M ^{[1
]}

WANG, DT ^{[1
]}

ESSER, N ^{[1
]}

CARDONA, M ^{[1
]}

ZEGENHAGEN, J ^{[1
]}

FIMLAND, BO ^{[1
]}

机构：

[1] NORWEGIAN INST TECHNOL,DEPT PHYS ELECTR,N-7034 TRONDHEIM,NORWAY

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.51.13880

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have derived a microscopic, structural model for the GaAs(001)-(6×6) surface reconstruction using scanning tunneling microscopy. It involves three atomic layers containing both As and Ga dimers. Previous studies suggested the (6×6) structure to be poorly ordered, often it was only described as a (1×6) superstructure. In contrast, we find a well-developed (6×6) superstructure with As-dimer rows in the [110] direction separated by 24. However, this reconstruction may not be a stable equilibrium structure. © 1995 The American Physical Society.

引用

页码：13880 / 13882

页数：3

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