EFFECT OF DONOR IMPURITIES ON THE DENSITY OF STATES NEAR THE BAND EDGE IN SILICON

被引：19
作者：
BENNETT, HS
LOWNEY, JR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期
关键词：
D O I：
10.1063/1.329497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：5633 / 5642
页数：10
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