EFFECT OF DONOR IMPURITIES ON THE DENSITY OF STATES NEAR THE BAND EDGE IN SILICON

被引：19
作者：
BENNETT, HS
LOWNEY, JR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期
关键词：
D O I：
10.1063/1.329497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5633 / 5642
页数：10
相关论文
共 20 条
[1]   INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].
BALKANSKI, M ;
AZIZA, A ;
AMZALLAG, E .
PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+
[2]   ON THE NUMBER OF BOUND STATES IN A CENTRAL FIELD OF FORCE [J].
BARGMANN, V .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1952, 38 (11) :961-966
[3]   ON THE PHYSICS AND MODELING OF SMALL SEMICONDUCTOR-DEVICES .1. [J].
BARKER, JR ;
FERRY, DK .
SOLID-STATE ELECTRONICS, 1980, 23 (06) :519-530
[4]  
CHADEAU K, 1977, INVERSE PROBLEMS QUA, pCH6
[5]   TRANSITION FROM DISCRETE TO CONTINUOUS SPECTRA [J].
DEWITT, BS .
PHYSICAL REVIEW, 1956, 103 (05) :1565-1571
[6]  
DWIGHT HB, 1961, TABLES INTEGRALS OTH, P119
[7]  
FRIEDEL, 1955, PHIL MAG, V46
[8]   ENERGY LEVEL SHIFTS IN A LARGE ENCLOSURE [J].
FUKUDA, N ;
NEWTON, RG .
PHYSICAL REVIEW, 1956, 103 (05) :1558-1564
[9]  
FUMI FG, 1955, PHIL MAG, V46
[10]   THEORETICAL CALCULATIONS OF FERMI LEVEL AND OF OTHER PARAMETERS IN PHOSPHORUS DOPED SILICON AT DIFFUSION TEMPERATURES [J].
JAIN, RK ;
VANOVERS.RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (02) :155-165
12