BONDING AND DIFFUSION AT AL AND AU INTERFACES WITH CDS

被引:38
作者
BRILLSON, LJ [1 ]
BAUER, RS [1 ]
BACHRACH, RZ [1 ]
MCMENAMIN, JC [1 ]
机构
[1] XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94305 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期
关键词
D O I
10.1116/1.570487
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:476 / 480
页数:5
相关论文
共 21 条
[1]   METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343
[2]  
BACHRACH RZ, 14TH INT C PHYS SEM, P1073
[3]  
BAUER R, UNPUBLISHED
[4]  
BAUER RS, 1978, P INT TOPICAL C SIO2
[5]  
BAUER RS, 1979, B AM PHYS SOC, V24, P249
[6]   COUPLED INTERFACE PLASMONS OF AL FILMS ON CDSE AND CDS [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1977, 38 (05) :245-248
[7]   CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J].
BRILLSON, LJ .
PHYSICAL REVIEW B, 1978, 18 (06) :2431-2446
[8]  
BRILLSON LJ, 1979, J VAC SCI TECHNOL, V16, P1137, DOI 10.1116/1.570177
[9]   TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].
BRILLSON, LJ .
PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263
[10]   CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].
BRILLSON, LJ ;
BACHRACH, RZ ;
BAUER, RS ;
MCMENAMIN, J .
PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401