PHOTOEMISSION EVIDENCE FOR BLOCH STATES IN A NARROW BAND INSULATOR - CSI

被引：4

作者：

DISTEFANO, TH

机构：

[1] Dept. of Applied Physics, Stanford University, Stanford

来源：

PHYSICS LETTERS A | 1969年 / A 30卷 / 05期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1016/0375-9601(69)91021-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

New photoemissions studies of CsI show strong evidence for Bloch states in the narrow valence band. The data indicate optical excitation from the three branches of the valence band dispersion curve. Simple ionic states predict transitions from a doublet which are inconsistent with a measured triplet. © 1969.

引用

页码：322 / +

页数：1

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