IMPLANTED SILICON JFET ON COMPLETELY DEPLETED HIGH-RESISTIVITY DEVICES

被引:89
作者
RADEKA, V
REHAK, P
RESCIA, S
GATTI, E
LONGONI, A
SAMPIETRO, M
BERTUCCIO, G
HOLL, P
STRUDER, L
KEMMER, J
机构
[1] TECH UNIV MUNICH,D-8000 MUNICH 80,FED REP GER
[2] MAX PLANCK INST,D-8000 MUNCHEN,FED REP GER
[3] POLITECN MILAN,DIPARTIMENTO ELETTRON,I-20133 MILAN,ITALY
[4] POLITECN MILAN,CNR,CTR ELETTRON QUANTIST & STRUMENTAZ ELETTRON,I-20133 MILAN,ITALY
关键词
D O I
10.1109/55.32439
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:91 / 94
页数:4
相关论文
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