SURFACE BANDS IN RELAXED CLEAVAGE SURFACE OF GAP

被引：23

作者：

BERTONI, CM ^{[1
]}

BISI, O ^{[1
]}

MANGHI, F ^{[1
]}

CALANDRA, C ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1256 / 1261

页数：6

共 14 条

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[8] INTRINSIC SURFACE STATES IN SEMICONDUCTORS .1. DIAMOND-TYPE CRYSTALS [J].

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[9] ELECTRONIC SURFACE PROPERTIES OF UHV-CLEAVED 3-5 COMPOUNDS [J].

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