FABRICATION OF AN INGAAS SINGLE-QUANTUM-WELL CIRCULAR RING LASER BY DIRECT LASER PATTERNING

被引：14
|
作者：
SHIH, MC
HU, MH
FREILER, MB
LEVY, M
SCARMOZZINO, R
OSGOOD, RM
TAO, IW
WANG, WI
机构：
[1] Microelectronics Sciences Laboratories, Columbia University, New York
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 20期
关键词：
D O I：
10.1063/1.113099
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The fabrication of single quantum well (SQW) ridge waveguide ring laser in strained InGaAs is described which utilizes direct-write laser lithography followed by cryogenic UV laser-assisted etching. The laser has a threshold current of 270 mA and emits ∼14 mW of single-frequency output. © 1995 American Institute of Physics.
引用
收藏
页码：2608 / 2610
页数：3
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