SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - REPLY

被引：10

作者：

HESS, K ^{[1
]}

TANG, JY ^{[1
]}

BRENNAN, K ^{[1
]}

SHICHIJO, H ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.330994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3327 / 3329

页数：3

共 14 条

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POLLACK, MA .

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[2] THE EFFECT OF COLLISIONAL BROADENING ON MONTE-CARLO SIMULATIONS OF HIGH-FIELD TRANSPORT IN SEMICONDUCTOR-DEVICES [J].

CAPASSO, F ;

PEARSALL, TP ;

THORNBER, KK .

ELECTRON DEVICE LETTERS, 1981, 2 (11) :295-297

[3] SIMULATION OF HIGH-FIELD TRANSPORT IN GAAS USING A MONTE-CARLO METHOD AND PSEUDOPOTENTIAL BAND STRUCTURES - BAND-STRUCTURE DEPENDENT TRANSPORT AND IMPACT IONIZATION IN GAAS - COMMENT [J].

CAPASSO, F ;

PEARSALL, TP ;

THORNBER, KK ;

NAHORY, RE ;

POLLACK, MA ;

BACHELET, GB ;

CHELIKOWSKY, JR .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3324-3326

[4]

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[5] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

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HOLONYAK, N ;

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TANG, JY ;

HESS, K .

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[6]

Hess K., 1981, IEEE Electron Device Letters, VEDL-2, P297, DOI 10.1109/EDL.1981.25440

[7]

KITTEL C, 1976, INTRO SOLID STATE PH, P57

[8] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS [J].

PEARSALL, T ;

CAPASSO, F ;

NAHORY, RE ;

POLLACK, MA ;

CHELIKOWSKY, JR .

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[9]

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[10]

PEIERLS RE, 1974, QUANTUM THEORY SOLID, P140

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