REDISTRIBUTION OF CHROMIUM IN SEMI-INSULATING GAAS-CR DURING LASER ANNEALING

被引：3

作者：

BADAWI, MH ^{[1
]}

SEALY, BJ ^{[1
]}

CLEGG, JB ^{[1
]}

机构：

[1] PHILIPS RES LABS,DIV SOLID STATE ELECTR,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 14期

关键词：

D O I：

10.1049/el:19800385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：554 / 556

页数：3

共 12 条

[1]

AUSTON, 1979, LASER SOLID INTERACT, V50, P11

[2] VAPORIZATION OF GAAS DURING LASER ANNEALING [J].

BADAWI, MH ;

SEALY, BJ ;

STEPHENS, KG .

ELECTRONICS LETTERS, 1979, 15 (24) :786-787

[3]

CLEGG JB, SURFACE INTERFACE AN

[4] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[5] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS [J].

FAVENNEC, PN ;

HARIDON, HL .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :699-701

[6]

FERRIS SD, 1979, 1978 AIP C P, V50

[7]

HAISTY RW, 1964, 7TH P INT C PHYS SEM, P1161

[8]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[9]

PAMPLIN BR, 1975, CRYSTAL GROWTH, P116

[10]

Tuck B., 1979, I PHYS C SER, V45, P114

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