ENERGY-SPECTRUM OF RHOMBOHEDRAL III-V-VI2 COMPOUNDS - TERNARY ISOELECTRONIC ANALOGS OF BISMUTH-TYPE SEMIMETALS

被引:6
作者
GITSU, DV
KANTSER, VG
MALKOVA, NM
TOFAN, VA
机构
[1] Inst. of Appl. Phys., Acad. of Sci., Kishinev
关键词
D O I
10.1088/0953-8984/2/5/007
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A model of the electronic energy spectrum for the rhombohedral III-V-VI2 compounds (the ternary isoelectronic analogues of the bismuth-type semimetals and the IV-VI semiconductors) has been elaborated on the basis of the genesis of their crystalline structure from the simple cubic lattice as well as the derivation of the band spectrum from the atomic p states. Rhombohedral III-V-VI2 compounds are shown to be narrow-gap semiconductors, with two conduction and two valence bands located at Gamma - and L points of the Brillouin zone. The band structure of TlBiC2 VI compounds has been found to be normal, while that of TlSbC 2VI is inverted.
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页码:1129 / 1140
页数:12
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