VERY LONG-WAVELENGTH INTERSUBBAND INFRARED HOT-ELECTRON TRANSISTOR

被引：0

作者：

GUNAPALA, SD

LIU, JK

LIN, TL

PARK, JS

机构：

[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期

关键词：

QUANTUM WELL; HOT ELECTRON; INTERSUBBAND; INFRARED DETECTORS AND LONG WAVELENGTH;

D O I：

10.1143/JJAP.33.869

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the first very long wavelength (16 mu m) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/Al-x Ga-1-(x) As (x=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick AlxGa1-xAs (x=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy tunneled electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.

引用

页码：869 / 872

页数：4

共 24 条

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