CALCULATION OF THE ZERO-TEMPERATURE AUGER RECOMBINATION RATE IN THE QUATERNARY SEMICONDUCTOR ALLOY GAALASSB

被引：26
作者：
BURT, MG
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1981年 / 14卷 / 22期
关键词：
D O I：
10.1088/0022-3719/14/22/020
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：3269 / 3278
页数：10
相关论文
共 19 条
  • [1] Aarik Ya. A., 1980, Soviet Journal of Quantum Electronics, V10, P50, DOI 10.1070/QE1980v010n01ABEH009853
  • [2] ANDERSON SJ, 1977, I PHYS C SER B, V33, P346
  • [3] OVERLAP INTEGRALS FOR BLOCH ELECTRONS
    ANTONCIK, E
    LANDSBERG, PT
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527): : 337 - &
  • [4] AUGER EFFECT IN SEMICONDUCTORS
    BEATTIE, AR
    LANDSBERG, PT
    [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
  • [5] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION
    BEATTIE, AR
    SMITH, G
    [J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &
  • [6] AUGER RECOMBINATION IN GAAS AN GASB
    BENZ, G
    CONRADT, R
    [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 843 - 855
  • [7] CHELIKOWSKY J, PHYS REV B, V14, P556
  • [8] CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB
    HAUG, A
    KERKHOFF, D
    LOCHMANN, W
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 357 - 365
  • [9] PHONON-ASSISTED AUGER RECOMBINATION IN DEGENERATE SEMICONDUCTORS
    HAUG, A
    [J]. SOLID STATE COMMUNICATIONS, 1977, 22 (08) : 537 - 539
  • [10] CARRIER DENSITY DEPENDENCE OF AUGER RECOMBINATION
    HAUG, A
    [J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1281 - 1284
12