MAGNETIC-FIELD STUDIES OF ELASTIC-SCATTERING AND OPTIC-PHONON EMISSION IN RESONANT-TUNNELING DEVICES

被引：172

作者：

LEADBEATER, ML

ALVES, ES

EAVES, L

HENINI, M

HUGHES, OH

CELESTE, A

PORTAL, JC

HILL, G

PATE, MA

机构：

[1] INST NATL SCI APPL LYON,DEPT GENIE PHYS,F-31077 TOULOUSE,FRANCE

[2] CNRS,SERV NATL CHAMPS INTENSES,F-38042 GRENOBLE,FRANCE

[3] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.39.3438

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3438 / 3441

页数：4

共 14 条

[1] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES [J].

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TOOMBS, GA ;

HILL, G ;

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[2] RESONANT MAGNETOTUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J].

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[3] SEQUENTIAL TUNNELING DUE TO INTERSUBBAND SCATTERING IN DOUBLE-BARRIER RESONANT TUNNELING DEVICES [J].

EAVES, L ;

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SHEARD, FW ;

PAYLING, CA ;

LEADBEATER, ML ;

ALVES, ES ;

FOSTER, TJ ;

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HUGHES, OH ;

PORTAL, JC ;

HILL, G ;

PATE, MA .

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[4]

Eaves L., 1988, Physics and Technology of Submicron Structures. Proceedings of the Fifth International Winter School, P74

[5] EVIDENCE FOR LO-PHONON-EMISSION-ASSISTED TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J].

GOLDMAN, VJ ;

TSUI, DC ;

CUNNINGHAM, JE .

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[6] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J].

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PAULUS, MJ ;

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APPLIED PHYSICS LETTERS, 1987, 51 (02) :121-123

[7] INVESTIGATIONS OF DOUBLE BARRIER RESONANT TUNNELING DEVICES BASED ON (ALGA)AS/GAAS [J].

HUGHES, OH ;

HENINI, M ;

ALVES, ES ;

EAVES, L ;

LEADBEATER, ML ;

FOSTER, TJ ;

SHEARD, FW ;

TOOMBS, GA ;

CELESTE, A ;

PORTAL, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1161-1164

[8] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1332-L1334

[9] INFRARED REFLECTIVITY SPECTRA AND RAMAN-SPECTRA OF GA1-XALX AS MIXED-CRYSTALS [J].

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SPITZER, WG .

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[10] CHARGE BUILDUP AND INTRINSIC BISTABILITY IN AN ASYMMETRIC RESONANT-TUNNELING STRUCTURE [J].

LEADBEATER, ML ;

ALVES, ES ;

EAVES, L ;

HENINI, M ;

HUGHES, OH ;

SHEARD, FW ;

TOOMBS, GA .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) :1060-1062

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