MAGNETIC-FIELD STUDIES OF ELASTIC-SCATTERING AND OPTIC-PHONON EMISSION IN RESONANT-TUNNELING DEVICES

[1] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES [J]. ELECTRONICS LETTERS, 1988, 24 (18) : 1190 - 1191

[2] RESONANT MAGNETOTUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 765 - 766

[3] SEQUENTIAL TUNNELING DUE TO INTERSUBBAND SCATTERING IN DOUBLE-BARRIER RESONANT TUNNELING DEVICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 212 - 214

[4] Eaves L., 1988, Physics and Technology of Submicron Structures. Proceedings of the Fifth International Winter School, P74

[5] EVIDENCE FOR LO-PHONON-EMISSION-ASSISTED TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J]. PHYSICAL REVIEW B, 1987, 36 (14): : 7635 - 7637

[6] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123

[7] INVESTIGATIONS OF DOUBLE BARRIER RESONANT TUNNELING DEVICES BASED ON (ALGA)AS/GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1161 - 1164

[8] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1332 - L1334

[9] INFRARED REFLECTIVITY SPECTRA AND RAMAN-SPECTRA OF GA1-XALX AS MIXED-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4362 - 4370

[10] CHARGE BUILDUP AND INTRINSIC BISTABILITY IN AN ASYMMETRIC RESONANT-TUNNELING STRUCTURE [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) : 1060 - 1062

[1] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELLING DEVICES [J]. ELECTRONICS LETTERS, 1988, 24 (18) : 1190 - 1191

[2] RESONANT MAGNETOTUNNELING IN ALGAAS/GAAS TRIPLE BARRIER DIODES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 765 - 766

[3] SEQUENTIAL TUNNELING DUE TO INTERSUBBAND SCATTERING IN DOUBLE-BARRIER RESONANT TUNNELING DEVICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (03) : 212 - 214

[4] Eaves L., 1988, Physics and Technology of Submicron Structures. Proceedings of the Fifth International Winter School, P74

[5] EVIDENCE FOR LO-PHONON-EMISSION-ASSISTED TUNNELING IN DOUBLE-BARRIER HETEROSTRUCTURES [J]. PHYSICAL REVIEW B, 1987, 36 (14): : 7635 - 7637

[6] ALGAAS/GAAS DOUBLE BARRIER DIODES WITH HIGH PEAK-TO-VALLEY CURRENT RATIO [J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 121 - 123

[7] INVESTIGATIONS OF DOUBLE BARRIER RESONANT TUNNELING DEVICES BASED ON (ALGA)AS/GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1161 - 1164

[8] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1332 - L1334

[9] INFRARED REFLECTIVITY SPECTRA AND RAMAN-SPECTRA OF GA1-XALX AS MIXED-CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4362 - 4370

[10] CHARGE BUILDUP AND INTRINSIC BISTABILITY IN AN ASYMMETRIC RESONANT-TUNNELING STRUCTURE [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) : 1060 - 1062