BAND-STRUCTURE AND ELECTRONIC-PROPERTIES OF NATIVE DEFECTS IN CUBIC SIC

被引：56

作者：

LI, Y ^{[1
]}

LINCHUNG, PJ ^{[1
]}

机构：

[1] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.36.1130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1130 / 1135

页数：6

共 31 条

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[8]

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