BRAGG GRATINGS FOR 1.55-MU-M WAVELENGTH FABRICATED ON SEMICONDUCTOR MATERIAL BY GRATING-PERIOD DOUBLING USING A PHASE MASK

被引：14

作者：

JENSEN, PI

SUDBO, A

机构：

[1] Telenor Research

[2] Center of Technology, University of Oslo

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 07期

关键词：

D O I：

10.1109/68.393205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 240-nm-period grating has been fabricated in photoresist on semiconductor material by doubling of the phase-mask grating period. A standard mask aligner retrofitted with a UV laser was used for lithography. The phase mask was optimized via numerical simulation of the distribution of optical power in the photoresist.

引用

页码：783 / 785

页数：3

共 6 条

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[6] 8-WAVELENGTH DBR LASER ARRAY FABRICATED WITH A SINGLE-STEP BRAGG GRATING PRINTING TECHNIQUE [J].

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