CONTRIBUTION TO ELECTRON-BEAM ANNEALING OF HIGH-DOSE ION-IMPLANTED POLYSILICON

被引：3
作者：
KRIMMEL, EF
LUTSCH, AGK
DOERING, E
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 02期
关键词：
D O I：
10.1002/pssa.2210710219
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：451 / 456
页数：6
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