CONTRIBUTION TO ELECTRON-BEAM ANNEALING OF HIGH-DOSE ION-IMPLANTED POLYSILICON

被引：3
作者：
KRIMMEL, EF
LUTSCH, AGK
DOERING, E
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 71卷 / 02期
关键词：
D O I：
10.1002/pssa.2210710219
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：451 / 456
页数：6
相关论文
共 13 条
[1]  
CSEPREGI L, 1978, 1977 P S THIN FILM P, P77
[2]   ANNEALING MECHANISM OF RADIATION-DAMAGE AND DOPANTS IN PULSED LASER-LIGHT IRRADIATED ION-IMPLANTED LAYERS [J].
HEYWANG, W ;
KRIMMEL, EF ;
RUNGE, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (01) :K79-K82
[3]   MONOLITHIC INTEGRATED-CIRCUIT FABRICATED IN LASER-ANNEALED POLYSILICON [J].
KAMINS, TI ;
LEE, KF ;
GIBBONS, JF ;
SARASWAT, KC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :290-293
[4]   KINETICS OF SCANNED ELECTRON-BEAM ANNEALING OF HIGH-ENERGY AS ION-IMPLANTED SILICON [J].
KRIMMEL, EF ;
OPPOLZER, H ;
RUNGE, H ;
WONDRAK, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :565-571
[5]  
KRIMMEL EF, 1982, PHYS STATUS SOLIDI A, V70, pK63, DOI 10.1002/pssa.2210700156
[6]   NEW METHOD FOR DETERMINING ACTIVATION ENERGIES APPLIED TO SUBSTAGES 3 ANNEALING OF AU-ION IRRADIATED AU FILMS [J].
KRIMMEL, EF .
PHYSICA STATUS SOLIDI, 1969, 33 (01) :K63-&
[7]  
KRIMMEL EF, 1980, 1979 P C LAS EL BEAM, P161
[8]   THIN-FILM MOSFETS FABRICATED IN LASER-ANNEALED POLYCRYSTALLINE SILICON [J].
LEE, KF ;
GIBBONS, JF ;
SARASWAT, KC .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :173-175
[9]   CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY FOR POLYCRYSTALLINE SILICON FILMS [J].
OPPOLZER, H ;
FALCKENBERG, R ;
DOERING, E .
JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :97-103
[10]  
OPPOLZER H, 1981, I PHYS C SER, V60, P283
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