RESONANT TUNNELING THROUGH THE BOUND-STATES OF A SINGLE DONOR ATOM IN A QUANTUM-WELL

被引：199

作者：

DELLOW, MW ^{[1
]}

BETON, PH ^{[1
]}

LANGERAK, CJGM ^{[1
]}

FOSTER, TJ ^{[1
]}

MAIN, PC ^{[1
]}

EAVES, L ^{[1
]}

HENINI, M ^{[1
]}

BEAUMONT, SP ^{[1
]}

WILKINSON, CDW ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.68.1754

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have observed a series of sharp peaks in the low-temperature I(V) characteristics of a gated 1-mu-m x 1-mu-m GaAs/(AlGa)As resonant tunneling diode, in which the gate is used to reduce the effective cross-sectional area from 0.7 to < 0.1-mu-m2. These peaks, which occur at voltages well below the calculated resonant threshold, show a weak dependence on temperature, magnetic field, and cross-sectional area. We argue that this subthreshold structure is due to an inhomogeneity which gives rise to a localized preferential current path, and we deduce that the spatial extent of the inhomogeneity is approximately 25 nm. The likely origin of the inhomogeneity is a donor impurity in the quantum well.

引用

页码：1754 / 1757

页数：4

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