POSSIBLE FIELD-ASSISTED INFRARED PHOTOCATHODE

[1] GUNN OSCILLATIONS IN INDIUM ARSENIDE - (UNIAXIAL PRESSURE EFFECT - E) [J]. APPLIED PHYSICS LETTERS, 1966, 9 (01) : 39 - +

[2] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[3] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[4] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[5] THEORY OF AVALANCHE BREAKDOWN IN INSB AND INAS [J]. PHYSICAL REVIEW, 1968, 167 (03): : 783 - &

[6] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 371 - &

[7] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 335 - &

[8] GRANGER R, 1964, CR HEBD ACAD SCI, V258, P1464

[9] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 370 - &

[10] LONG D, 1970, SEMICONDUCTORS SEMIM, V5

[1] GUNN OSCILLATIONS IN INDIUM ARSENIDE - (UNIAXIAL PRESSURE EFFECT - E) [J]. APPLIED PHYSICS LETTERS, 1966, 9 (01) : 39 - +

[2] HOT-ELECTRON EMISSION FROM SHALLO P-N JUNCTIONS IN SILICON [J]. PHYSICAL REVIEW, 1963, 130 (03): : 972 - +

[3] 3-5 COMPOUND PHOTOCATHODES - A NEW FAMILY OF PHOTOEMITTERS WITH GREATLY IMPROVED PERFORMANCE [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (11): : 1788 - +

[4] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[5] THEORY OF AVALANCHE BREAKDOWN IN INSB AND INAS [J]. PHYSICAL REVIEW, 1968, 167 (03): : 783 - &

[6] LONG-WAVELENGTH PHOTOEMISSION FROM GA1-XINXAS ALLOYS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (09) : 371 - &

[7] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 335 - &

[8] GRANGER R, 1964, CR HEBD ACAD SCI, V258, P1464

[9] LONG-WAVELENGTH THRESHOLD OF CS2O-COATED PHOTOEMITTERS [J]. APPLIED PHYSICS LETTERS, 1970, 16 (09) : 370 - &

[10] LONG D, 1970, SEMICONDUCTORS SEMIM, V5