AUGER-ELECTRON SPECTROSCOPY AND SECONDARY-ION MASS-SPECTROSCOPY STUDY OF INTERDIFFUSION IN GOLD BISMUTH OXIDE AND ALUMINUM BISMUTH OXIDE THIN-FILMS

被引:3
作者
SUNDARAM, KB [1 ]
GROGAN, AL [1 ]
SESHAN, SS [1 ]
机构
[1] UNIV CENT FLORIDA,COLL ENGN,DEPT MECH & AEROSP ENGN,ORLANDO,FL 32816
关键词
D O I
10.1007/BF00703038
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Thin-film bismuth oxide systems were prepared by depositing gold or aluminium on glass substrates, followed by deposition of bismuth over the gold or aluminium metal layer, after which thermal oxidation was carried out to yield a Bi2O3 layer. Auger electron spectroscopy (AES) and secondary-ion mass spectroscopy (SIMS) were performed on these thin-film systems. AES results show that the average stoichiometry of bismuth oxide films is represented by Bi2O3. SIMS analysis suggests that the oxidation process results in extensive interdiffusion for the BiO(x)-Al-glass system. The extent of interdiffusion in the BiO(x)-Au glass system is certainly far less extensive than in the BiO(x)-Al-glass system.
引用
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页码:257 / 262
页数:6
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