SURFACE SEGREGATION OF IN ATOMS DURING MOLECULAR-BEAM EPITAXY AND ITS INFLUENCE ON THE ENERGY-LEVELS IN INGAAS/GAAS QUANTUM-WELLS

被引：464

作者：

MURAKI, K ^{[1
]}

FUKATSU, S ^{[1
]}

SHIRAKI, Y ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 05期

关键词：

D O I：

10.1063/1.107835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary-ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520-degrees-C, the segregation length was observed to increase from 0. 8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.

引用

页码：557 / 559

页数：3

共 7 条

[1] MONOLAYER-SCALE OPTICAL INVESTIGATION OF SEGREGATION EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES [J].