SURFACE SEGREGATION OF IN ATOMS DURING MOLECULAR-BEAM EPITAXY AND ITS INFLUENCE ON THE ENERGY-LEVELS IN INGAAS/GAAS QUANTUM-WELLS

被引：461
作者：
MURAKI, K [1 ]
FUKATSU, S [1 ]
SHIRAKI, Y [1 ]
ITO, R [1 ]
机构：
[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 05期
关键词：
D O I：
10.1063/1.107835
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Surface segregation of In atoms during molecular beam epitaxy (MBE) and its influence on the energy levels in InGaAs/GaAs quantum wells (QWs) were systematically studied using secondary-ion mass spectroscopy (SIMS) and photoluminescence (PL). Strong dependence of In surface segregation on the growth conditions was found; when the growth temperature was raised from 370 to 520-degrees-C, the segregation length was observed to increase from 0. 8 up to 2.9 nm, accompanied by an appreciable peak energy shift in the PL spectra of the InGaAs/GaAs QWs. The correlation between In surface segregation and the energy levels in InGaAs/GaAs QWs was clarified for the first time.
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页码：557 / 559
页数：3
相关论文
共 7 条
  • [1] MONOLAYER-SCALE OPTICAL INVESTIGATION OF SEGREGATION EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES
    GERARD, JM
    MARZIN, JY
    [J]. PHYSICAL REVIEW B, 1992, 45 (11): : 6313 - 6316
  • [2] ENERGY-LEVELS OF STRAINED INXGA1-XAS-GAAS SUPERLATTICES
    JOGAI, B
    YU, PW
    [J]. PHYSICAL REVIEW B, 1990, 41 (18) : 12650 - 12658
  • [3] EXPERIMENTAL-EVIDENCE OF DIFFERENCE IN SURFACE AND BULK COMPOSITIONS OF ALXGA1-XAS, ALXIN1-XAS AND GAXIN1-XAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    MASSIES, J
    TURCO, F
    SALETES, A
    CONTOUR, JP
    [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) : 307 - 314
  • [4] SURFACE SEGREGATION OF 3RD-COLUMN IN GROUP III-V ARSENIDE COMPOUNDS - TERNARY ALLOYS AND HETEROSTRUCTURES
    MOISON, JM
    GUILLE, C
    HOUZAY, F
    BARTHE, F
    VANROMPAY, M
    [J]. PHYSICAL REVIEW B, 1989, 40 (09): : 6149 - 6162
  • [5] SURFACE SEGREGATION IN III-V ALLOYS
    MOISON, JM
    HOUZAY, F
    BARTHE, F
    GERARD, JM
    JUSSERAND, B
    MASSIES, J
    TURCOSANDROFF, FS
    [J]. JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 141 - 150
  • [6] KINETICS OF DOPANT INCORPORATION USING A LOW-ENERGY ANTIMONY ION-BEAM DURING GROWTH OF SI(100) FILMS BY MOLECULAR-BEAM EPITAXY
    NI, WX
    KNALL, J
    HASAN, MA
    HANSSON, GV
    SUNDGREN, JE
    BARNETT, SA
    MARKERT, LC
    GREENE, JE
    [J]. PHYSICAL REVIEW B, 1989, 40 (15): : 10449 - 10459
  • [7] SATO M, 1992, SURF SCI, V267, P195, DOI 10.1016/0039-6028(92)91119-V
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