MODULATED MOLECULAR-BEAM AND RHEED STUDIES OF MBE AND MOMBE GROWTH

被引：29

作者：

GIBSON, EM ^{[1
]}

FOXON, CT ^{[1
]}

ZHANG, J ^{[1
]}

JOYCE, BA ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

Electrons--Diffraction - Molecular Beam Epitaxy - Organometallics;

D O I：

10.1016/0022-0248(90)90342-I

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Modulated beam and RHEED techniques are used to study the thermal decomposition of TMGa under MOMBE conditions and the data compared to conventional MBE growth. The growth rate of GaAs using TMGa and As2 or As4 is a complex function of substrate temperature and TMGa flux. The presence of CH3 (no CH4 or C2H6 detected) desorbing from the surface suggests the pyrolysis of TMGa via sequential release of methyl radicals. The amount of desorbing Ga species shows a general decrease with increasing substrate temperature. The reaction mechanism for the decomposition of TMGa under MOMBE conditions is complicated with at least one step dominating the growth rate of GaAs. © 1990.

引用

页码：81 / 86

页数：6

共 15 条

[1] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION [J].