RESONANT INTERBAND TUNNELING THROUGH A 110 NM INAS QUANTUM WELL

被引：24

作者：

BERESFORD, R ^{[1
]}

LUO, LF ^{[1
]}

LONGENBACH, KF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 06期

关键词：

D O I：

10.1063/1.102742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanism of resonant interband tunneling in polytype heterostructures of GaSb/AlSb/InAs gives excellent peak-to-valley current ratios due to the band-gap blocking of the nonresonant current components. Using InAs as the base in a double-barrier polytype heterostructure, it is possible to demonstrate resonant tunneling at room temperature through a quantum well as wide as 110 nm. At this width, which is about 20 times larger than that typically used in resonant tunneling diodes in the GaAs/AlGaAs system, the peak-to-valley ratio is 44:1 (77 K). Significant negative differential resistance is observed even for 240 nm wells. The projected device response time for a resonant tunneling transistor with a wide InAs quantum base is more than five times faster than for a GaAs device, due to the reduced base resistance.

引用

页码：551 / 553

页数：3

共 18 条

[1] RESONANT TUNNELING OF HOLES IN ALSB GASB ALSB DOUBLE-BARRIER HETEROSTRUCTURES [J].