SHORT-WAVELENGTH (638NM) ROOM-TEMPERATURE CW OPERATION OF INGAAIP LASER-DIODES WITH QUATERNARY ACTIVE LAYER

被引：33
作者：
ISHIKAWA, M
SHIOZAWA, H
TSUBURAI, Y
UEMATSU, Y
机构：
[1] Research and Development Center, Toshiba Corporation, Kawasaki 210, 1, Komukai Toshiba-cho, Saiwai-ku
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 03期
关键词：
Laser and laser application; Semiconductor lasers; Vapour deposition;
D O I：
10.1049/el:19900142
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
638 nm room temperature (25°C) CW operation was successfully achieved by InGaAlP visible light laser diodes with a quaternary active layer. A transverse mode stabilised selectively buried ridge-waveguide structure was fabricated by metalorganic chemical vapour deposition. The threshold current was 100 mA at 25°C and CW operation was attained at up to 50°C. The oscillation wavelength was the shortest for room temperature CW operations of laser diodes ever reported. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：211 / 213
页数：3
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