UPPER CRITICAL FIELD HC2 OF NBN FILM PREPARED BY REACTIVE SPUTTERING

被引：10
作者：
SAITO, Y
ANAYAMA, T
YASOHAMA, K
YASUKOUC.K
ONODERA, Y
机构：
[1] Department of Engineering, Tohoku University, Sendai
[2] Department of Physics, Atomic Energy Research Institute, Nihon University, Tokyo
[3] Research Institute of Electrical Communication, Tohoku University, Sendai
来源：
APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 09期
关键词：
D O I：
10.1063/1.1652817
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The upper critical field Hc2 of about 200 kOe was obtained for niobium nitride films prepared by reactive sputtering. Electron microscopy was used to determine the crystal structure. It was shown that the electron diffraction patterns of these films were that of the NbN with the NaCl crystal structure. © 1969 The American Institute of Physics.
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页码：285 / &
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