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- [1] HIGH-EFFICIENCY FAST-RESPONSE ALXGA1-XAS HETEROJUNCTION LIGHT-EMITTING DIODE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (07): : 837 - 839
- [2] HETEROPHOTODIODES OF N-GAAS-P-ALXGA1-XAS TYPE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 673 - 674
- [4] KINETICS OF FAST-RESPONSE P-N PHOTO-DIODES MADE OF INTRINSIC CONDUCTION MATERIALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (01): : 90 - 92
- [6] INVESTIGATION OF PHOTOELECTRIC CHARACTERISTICS OF HIGH-EFFICIENCY ALXGA1-XAS-GAAS SOLAR CELLS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (12): : 1525 - 1529
- [7] PHOTOVOLTAIC RESPONSE OF GaAs-AlxGa1 - xAs n-N HETEROJUNCTION. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1982, 3 (06): : 465 - 473
- [9] EXCESS NOISE GENERATED IN P-ALXGA1-XAS-N-GAAS HETEROJUNCTION PHOTODIODES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1599 - 1602
- [10] ENERGY-LEVEL DIAGRAM OF HIGH-EFFICIENCY CDXHG1-XTE PHOTO-DIODES INFRARED PHYSICS, 1977, 17 (01): : 1 - 4