Enhancing Robustness of Memristor Crossbar-Based Spiking Neural Networks against Nonidealities: A Hybrid Approach for Neuromorphic Computing in Noisy Environments

被引:0
作者
Zhang, Yafeng [1 ]
Sun, Hao [1 ,2 ]
Xie, Mande [1 ]
Feng, Zhe [3 ]
Wu, Zuheng [3 ]
机构
[1] Zhejiang Gongshang Univ, Sussex Artificial Intelligence Inst, Sch Informat & Elect Engn, Hangzhou 310018, Peoples R China
[2] China Univ Min & Technol, Sch Informat & Control Engn, Xuzhou 221116, Peoples R China
[3] Anhui Univ, Sch Integrated Circuits, Hefei 230601, Peoples R China
基金
中国国家自然科学基金;
关键词
hybrid residual spiking neural network; memristor crossbar; neuromorphic computing; nonideality;
D O I
暂无
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Memristor crossbar-based spiking neural networks (SNNs) face challenges caused by nonidealities associated with their hardware-based neurons and synapses. The key nonidealities include electric-field noise, conductance noise, and conductance drift. This study investigates the robustness of fully connected, convolutional, residual, and spike-timing-dependent plasticity-based SNNs against hardware nonidealities using the MNIST, Fashion MNIST, and CIFAR10 datasets. In response to these challenges, a novel hybrid residual SNN (HRSNN) is proposed that incorporates a new neuron circuit and a weight-dependent loss function. The HRSNN in a high-intensity noise environment is evaluated using the neuromorphic DVS128 Gesture dataset. The achieved accuracy rate of 92.71% is only 2.15% lower than that of the noise-free environment. These results demonstrate the robustness of the proposed HRSNN under high-intensity noise conditions and present new possibilities for the advancement of neuromorphic computing in noisy environments.
引用
收藏
页数:14
相关论文
共 33 条
  • [1] Bayat FM, 2017, ICCAD-IEEE ACM INT, P549, DOI 10.1109/ICCAD.2017.8203825
  • [2] Low Power Stochastic Neurons From SiO2-Based Bilayer Conductive Bridge Memristors for Probabilistic Spiking Neural Network Applications-Part 1: Experimental Characterization
    Bousoulas, P.
    Tsioustas, C.
    Hadfield, J.
    Aslanidis, V
    Limberopoulos, S.
    Tsoukalas, D.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (05) : 2360 - 2367
  • [3] Boybat I, 2018, 2018 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS 2018)
  • [4] Chen LR, 2017, DES AUT TEST EUROPE, P19, DOI 10.23919/DATE.2017.7926952
  • [5] MEMRISTOR - MISSING CIRCUIT ELEMENT
    CHUA, LO
    [J]. IEEE TRANSACTIONS ON CIRCUIT THEORY, 1971, CT18 (05): : 507 - +
  • [6] Dai Y., 2023, ADV INTELL SYST, V5, P2200455
  • [7] Diehl PU, 2014, IEEE IJCNN, P4288, DOI 10.1109/IJCNN.2014.6889876
  • [8] A backpropagation with gradient accumulation algorithm capable of tolerating memristor non-idealities for training memristive neural networks
    Dong, Shuai
    Chen, Yihong
    Fan, Zhen
    Chen, Kaihui
    Qin, Minghui
    Zeng, Min
    Lu, Xubing
    Zhou, Guofu
    Gao, Xingsen
    Liu, Jun-Ming
    [J]. NEUROCOMPUTING, 2022, 494 : 89 - 103
  • [9] Eshraghian JK, 2023, Arxiv, DOI [arXiv:2109.12894, DOI 10.48550/ARXIV.2109.12894, 10.1109/JPROC.2023.3308088]
  • [10] Fang W., 2021, P 2021 C NEUR INF PR, P1