DOPING SUPERLATTICES BASED ON INSB FOR MID-INFRARED DETECTOR APPLICATIONS

被引：17

作者：

PHILLIPS, CC

机构：

[1] Solid State Physics Group, Physics Department, Imperial College

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 02期

关键词：

D O I：

10.1063/1.103060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The suitability of doping ("nipi") superlattices based on InSb for 10 μm detector applications is studied and 77 K D* values of 8.1×1010 cm√Hz/W are found in optimized structures. The mode of nipi operation results in "self-passivating" devices which are compatible with III-V processing technology, and sensitivity uniformity figures superior to CdHgTe devices for large-area integrated detector arrays are predicted.

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页码：151 / 153

页数：3

相关论文

共 18 条

[1] GAAS LIGHT-EMITTING-DIODES WITH N-I-P-I ACTIVE LAYERS FABRICATED BY SELECTIVE CONTACT DIFFUSION [J].

ACKLEY, DE ;

MANTZ, J ;

LEE, H ;

NOURI, N ;

SHIEH, CL .

APPLIED PHYSICS LETTERS, 1988, 53 (02) :125-127

[2]

BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P213

[3] DOPING SUPERLATTICES (N-I-P-I CRYSTALS) [J].

DOHLER, GH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1682-1695

[4]

DORNHAUS R, 1983, SPRINGER TRAC MOD PH, V98, P119

[5] GRATING ENHANCEMENT OF QUANTUM WELL DETECTOR RESPONSE [J].

GOOSSEN, KW ;

LYON, SA ;

ALAVI, K .

APPLIED PHYSICS LETTERS, 1988, 53 (12) :1027-1029

[6]

HODGE CC, 1989, IN PRESS SEMICOND SC

[7] FREQUENCY-DEPENDENCE OF 2-PHOTON ABSORPTION IN INSB AND HG1-XCDXTE [J].

JOHNSTON, AM ;

PIDGEON, CR ;

DEMPSEY, J .

PHYSICAL REVIEW B, 1980, 22 (02) :825-831

[8] BAND STRUCTURE OF INDIUM ANTIMONIDE [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 1 (04) :249-261

[9] RECOMBINATION MECHANISMS IN 8-14-MU HGCDTE [J].

KINCH, MA ;

BRAU, MJ ;

SIMMONS, A .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (04) :1649-1663

[10] OPTICAL ABSORPTION IN PURE SINGLE CRYSTAL INSB AT 298-DEGREES-K AND 78-DEGREES-K [J].

KURNICK, SW ;

POWELL, JM .

PHYSICAL REVIEW, 1959, 116 (03) :597-604