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SUB-0.5-MU-M LITHOGRAPHY WITH A NEW ION PROJECTION LITHOGRAPHY MACHINE USING SILICON OPEN STENCIL MASKS
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MAGNETICALLY ENHANCED REACTIVE ION ETCHING OF SILICON IN BROMINE PLASMAS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
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HIGH-RESOLUTION FABRICATION PROCESS FOR SILICON ION MASKS
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KOLECK B, 1989, IEEE T ELECTRON DEV, V36, P669
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CHARACTERIZATION OF THIN BORON-DOPED SILICON MEMBRANES BY DOUBLE-CRYSTAL X-RAY TOPOGRAPHY
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RANDALL JN, 1986, J VAC SCI TECHNOL A, V4, P777, DOI 10.1116/1.573812
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SILICON-NITRIDE STENCIL MASKS FOR HIGH-RESOLUTION ION LITHOGRAPHY PROXIMITY PRINTING
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THE THERMOMECHANICAL STABILITY OF ION-BEAM MASKS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
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