2-QUANTUM PHOTOEMISSION YIELD SPECTRUM OF SILICON

被引：8

作者：

MOISON, JM

BENSOUSSAN, M

机构：

来源：

SOLID STATE COMMUNICATIONS | 1981年 / 39卷 / 11期

关键词：

D O I：

10.1016/0038-1098(81)91116-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1213 / 1215

页数：3

共 10 条

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[7]

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[9] TEMPERATURE-DEPENDENCE OF THE OPTICAL-PROPERTIES OF SILICON [J].

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[10] REFLECTOMETRIC STUDY OF DANGLING-BOND SURFACE-STATES AND OXYGEN-ADSORPTION ON THE CLEAN SI(111)7X7 SURFACE [J].

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