RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS

被引：58
|
作者：
RINDNER, W
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 08期
关键词：
D O I：
10.1063/1.1728998
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2479 / +
页数：1
相关论文
共 50 条
  • [31] P-N JUNCTIONS IN LEAD TELLURIDE
    DAY, HM
    MACPHERSON, A
    PROCEEDINGS OF THE IEEE, 1963, 51 (10) : 1362 - &
  • [32] POPULATION INVERSION IN P-N JUNCTIONS
    NORDMAN, JE
    PROCEEDINGS OF THE IEEE, 1964, 52 (06) : 724 - &
  • [33] CATHODOLUMINESCENCE AT P-N JUNCTIONS IN GAAS
    WITTRY, DB
    KYSER, DF
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) : 1387 - &
  • [34] CURRENT CARRIERS IN P-N JUNCTIONS
    GRUBNIKOV, ZS
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (06): : 1211 - 1219
  • [35] PHOTOVOLTAIC EFFECT IN P-N JUNCTIONS
    CUMMEROW, RL
    PHYSICAL REVIEW, 1954, 95 (01): : 16 - 21
  • [36] p-n junctions in silicon nanowires
    G. Goncher
    R. Solanki
    J. R. Carruthers
    J. Conley
    Y. Ono
    Journal of Electronic Materials, 2006, 35 : 1509 - 1512
  • [37] Epitaxial Graphene p-n Junctions
    Hu, Jiuning
    Kruskopf, Mattias
    Yang, Yanfei
    Wu, Bi-Yi
    Tian, Jifa
    Panna, Alireza
    Rigosi, Albert F.
    Lee, Hsin-Yen
    Payagala, Shamith
    Jones, George R.
    Kraft, Marlin E.
    Jarrett, Dean G.
    Watanabe, Kenji
    Taniguchi, Takashi
    Elmquist, Randolph E.
    Newell, David B.
    2018 CONFERENCE ON PRECISION ELECTROMAGNETIC MEASUREMENTS (CPEM 2018), 2018,
  • [38] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
    SUNOHARA, Y
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
  • [39] THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS
    VUL, BM
    SEGAL, BI
    SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (04): : 637 - 645
  • [40] Implanted p-n junctions in GaN
    Cao, XA
    LaRoche, JR
    Ren, F
    Pearton, SJ
    Lothian, JR
    Singh, RK
    Wilson, RG
    Guo, HJ
    Pennycook, SJ
    SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1235 - 1238
12345