RESISTANCE OF ELASTICALLY DEFORMED SHALLOW P-N JUNCTIONS

被引：58

作者：

RINDNER, W

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 08期

关键词：

D O I：

10.1063/1.1728998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2479 / +

页数：1

相关论文

共 5 条

[1] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].

ESAKI, L ;

MIYAHARA, Y .

SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&

[2] THE EFFECTS OF PRESSURE AND TEMPERATURE ON THE RESISTANCE OF P-N JUNCTIONS IN GERMANIUM [J].

HALL, HH ;

BARDEEN, J ;

PEARSON, GL .

PHYSICAL REVIEW, 1951, 84 (01) :129-132

[3] PRESSURE DEPENDENCE OF THE CURRENT-VOLTAGE CHARACTERISTICS OF ESAKI DIODES [J].

MILLER, SL ;

NATHAN, MI ;

SMITH, AC .

PHYSICAL REVIEW LETTERS, 1960, 4 (02) :60-62

[4] CURRENT-VOLTAGE CHARACTERISTICS OF PLASTICALLY DEFORMED GERMANIUM P-N JUNCTIONS [J].

RYUZAN, O .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (11) :2177-&

[5] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON [J].

SMITH, CS .

PHYSICAL REVIEW, 1954, 94 (01) :42-49