MEASUREMENTS OF HOT-ELECTRON CONDUCTION AND REAL-SPACE TRANSFER IN GAAS-ALXGA1-X AS HETEROJUNCTION LAYERS

被引：56

作者：

KEEVER, M ^{[1
]}

SHICHIJO, H ^{[1
]}

HESS, K ^{[1
]}

BANERJEE, S ^{[1
]}

WITKOWSKI, L ^{[1
]}

MORKOC, H ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 01期

关键词：

D O I：

10.1063/1.92117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：36 / 38

页数：3

共 8 条

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[7] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER [J].

HESS, K ;

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APPLIED PHYSICS LETTERS, 1979, 35 (06) :469-471

[8] REAL-SPACE ELECTRON-TRANSFER BY THERMIONIC EMISSION IN GAAS-ALXGA1-XAS HETEROSTRUCTURES - ANALYTICAL MODEL FOR LARGE LAYER WIDTHS [J].

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SOLID-STATE ELECTRONICS, 1980, 23 (08) :817-822

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