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LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF RHODIUM
被引:8
|作者:
FLINT, EB
MESSELHAUSER, J
SUHR, H
机构:
[1] Institute of Organic Chemistry, University of Tübingen, 7400 Tübingen
关键词:
D O I:
10.1016/0169-4332(92)90017-R
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
We report here the laser CVD of rhodium stripes on glass substrates from volatile rhodium precursors Rh(CO)2dike, where dike = acac, thd, and hfa. Stripe dimensions, resistivities, and chemical composition were studied as functions of CW argon ion laser power, writing speed, and precursor vapor pressure. Stripe widths ranged from around fifteen up to hundreds of microns, and heights over 5-mu-m were observed. Stripe resistivities were optimal at intermediate laser powers, and ranged from 2 to 60 times that of the bulk material. The higher volatility of the hfa precursor allowed deposition to take place at room temperature.
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页码:56 / 59
页数:4
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