ANALYSIS OF HYDROGEN IN LOW-PRESSURE DIAMOND LAYERS

被引:9
|
作者
WAGNER, W [1 ]
RAUCH, F [1 ]
HAUBNER, R [1 ]
LUX, B [1 ]
机构
[1] TECH UNIV VIENNA,INST CHEM TECHNOL INORGAN MAT,A-1060 VIENNA,AUSTRIA
关键词
D O I
10.1016/0040-6090(92)90095-S
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The hydrogen concentration of diamond layers produced by a low pressure chemical vapour deposition method on SiAlON substrates has been determined by means of the N-15 nuclear reaction analysis technique. The results show distinct differences in the hydrogen content which depend on the gas pressure and on the acetone-hydrogen gas mixture used in the deposition. The resulting diamond morphology is found to be related to the hydrogen content, well-faceted layers containing about 0.2-0.9 at.% H, and balas-type layers with about 1.4 at.% H. Contrary to expection, no relation between the crystal size in the well-faceted layers and the average hydrogen content was found. Additional Rutherford backscattering measurements revealed a high purity of the films with respect to elements heavier than carbon.
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页码:24 / 28
页数:5
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