OPTICAL BISTABILITY IN SEMICONDUCTORS

被引：392
作者：
GIBBS, HM
MCCALL, SL
VENKATESAN, TNC
GOSSARD, AC
PASSNER, A
WIEGMANN, W
机构：
[1] Bell Laboratories, Murray Hill
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 06期
关键词：
D O I：
10.1063/1.91157
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical bistability has been observed in a semiconductor for the first time. The bistable etalon consists of a GaAlAs-GaAs-GaAlAs molecular-beam- epitaxially-grown sandwich with 90% reflectivity coatings. The bistability is primarily dispersive with the nonlinear refractive index arising from light-induced changes in exciton absorption. Using light of frequency just below the exciton peak, we observed bistability from 5 to 120°K with 40-ns turn-off and subnanosecond turn-on times with 1 mW/μm2 holding intensity.
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页码：451 / 453
页数：3
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