SUBMICROMETER GATE FABRICATION OF GAAS MESFET BY PLASMA ETCHING

被引：19

作者：

TAKAHASHI, S

MURAI, F

KODERA, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 10期

关键词：

D O I：

10.1109/T-ED.1978.19254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1213 / 1218

页数：6

共 9 条

[1] MICROFABRICATION OF ANTI-REFLECTIVE CHROMIUM MASK BY GAS PLASMA [J].

ABE, H ;

NISHIOKA, K ;

TAMURA, S ;

NISHIMOTO, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :25-31

[2]

ABE H, 1975, J JAPAN SOC APPL P S, V44, P287

[3] OPTIMIZED DESIGN OF GAAS FETS FOR LOW-NOISE MICROWAVE-AMPLIFIERS [J].

ASAI, S ;

OKAZAKI, S ;

KODERA, H .

SOLID-STATE ELECTRONICS, 1976, 19 (06) :463-470

[4]

GARIVIN HL, 1973, J VACUUM SCI TECHNOL, V8, P552

[5] LOW-NOISE GAAS MESFETS [J].

HEWITT, BS ;

COX, HM ;

FUKUI, H ;

DILORENZO, JV ;

SCHLOSSER, WO ;

IGLESIAS, DE .

ELECTRONICS LETTERS, 1976, 12 (12) :309-310

[6] MICROFABRICATION TECHNIQUE BY GAS PLASMA ETCHING METHOD [J].

KOMIYA, H ;

TOYODA, H ;

KATO, T ;

INABA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 :19-24

[7]

KUMAR R, 1975, DIG TECH PAPERS, P27

[8] SUBMICRON SINGLE-GATE AND DUAL-GATE GAAS MESFETS WITH IMPROVED LOW-NOISE AND HIGH-GAIN PERFORMANCE [J].

OGAWA, M ;

OHATA, K ;

FURUTSUKA, T ;

KAWAMURA, N .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :300-305

[9] HALF-MICRON GATE GAAS FET FABRICATED BY CHEMICAL DRY ETCHING [J].

TAKAHASHI, S ;

MURAI, F ;

KURONO, H ;

HIRAO, M ;

KODERA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :115-118

← 1 →