DIRECTION OF VLSI CMOS TECHNOLOGY

被引:0
作者
NISHI, Y
机构
来源
HEWLETT-PACKARD JOURNAL | 1987年 / 38卷 / 06期
关键词
INTEGRATED CIRCUITS; VLSI; -; Components; TRANSISTORS;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Since stochastic fluctuation of device and process parameters becomes more significant with increasing numbers of transistors on a chip, there is a strong requirement for increased noise immunity and decreased power consumption in higher density circuits. Although low-power CMOS circuits were invented in the 1960s, they did not increase in importance until integration density exceeded 100,000 devices/chip. Since then CMOS has penetrated into static memories as well as microprocessors. This article will briefly review the current status of CMOS technology and discuss engineering challenges for future microcircuit technology.
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页码:24 / 25
页数:2
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