MOBILITY OF EDGE DISLOCATIONS ON 112 SLIP PLANES IN 3.25 PERCENT SILICON IRON

被引：69

作者：

ERICKSON, JS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 08期

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D O I：

10.1063/1.1729004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2499 / &

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[21] EFFECT OF SOME IMPURITIES ON GRAIN GROWTH AND MAGNETIC ANISOTROPY OF 3.25 PERCENT SILICON-IRON STRIPS
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[24] EFFECT OF GRAIN SIZE AND TEMPERATURE ON SLIP, TWINNING AND FRACTURE IN 3-PERCENT SILICON IRON
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[25] Edge dislocations emitted along multiple inclined slip planes from a Mode I crack .1. Sequential emission
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[27] AC MAGNETOSTRICTION OF 3.25-PERCENT GRAIN-ORIENTED SILICON-IRON UNDER COMBINED LONGITUDINAL AND NORMAL COMPRESSIVE STRESS
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[30] Molecular Statics Simulation of the Effect of Hydrogen Concentration on {112} < 111 > Edge Dislocation Mobility in Alpha Iron
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