MOBILITY OF EDGE DISLOCATIONS ON 112 SLIP PLANES IN 3.25 PERCENT SILICON IRON

被引:69
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ERICKSON, JS
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10.1063/1.1729004
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O59 [应用物理学];
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页码:2499 / &
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[1]   MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS [J].
STEIN, DF ;
LOW, JR .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) :362-369
[2]   A STUDY OF 112 EDGE DISLOCATIONS IN BENT SILICON-IRON SINGLE CRYSTALS [J].
HIBBARD, WR ;
DUNN, CG .
ACTA METALLURGICA, 1956, 4 (03) :306-315
[3]   CITATION CLASSIC - MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS [J].
STEIN, DF .
CURRENT CONTENTS/PHYSICAL CHEMICAL & EARTH SCIENCES, 1980, (32) :18-18
[4]   EDGE DISLOCATIONS DISSOCIATED IN (112) PLANES AND TWINNING MECHANISM OF BCC METALS [J].
OGAWA, K .
PHILOSOPHICAL MAGAZINE, 1965, 11 (110) :217-&
[5]   MOBILITY OF EDGE DISLOCATIONS IN SILICON-IRON CRYSTALS AT 20 DEGREES K [J].
STEIN, DF ;
LAFORCE, RP .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (02) :661-&
[6]   Iron gettering at slip dislocations in Czochralski silicon [J].
Lauer, K. ;
Herms, M. ;
Grochocki, A. ;
Bollmann, J. .
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, 2011, 178-179 :211-+
[7]   MOBILITY OF EDGE DISLOCATIONS ON (110) PLANES IN TUNGSTEN SINGLE CRYSTALS [J].
SCHADLER, HW .
ACTA METALLURGICA, 1964, 12 (08) :861-&
[8]   MOBILITY OF EDGE DISLOCATIONS IN BASAL-SLIP SYSTEM OF ZINC [J].
POPE, DP ;
VREELAND, T ;
WOOD, DS .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :4011-&
[9]   DIRECT MEASUREMENT OF MOBILITY OF EDGE AND SCREW DISLOCATIONS IN 3 PERCENT SILICON-IRON BY HIGH-VOLTAGE TRANSMISSION ELECTRON-MICROSCOPY [J].
SAKA, H ;
IMURA, T .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1972, 32 (03) :702-&
[10]   MAGNETIC PROPERTIES OF TEXTURED SILICON-IRON ALLOYS WITH SILICON CONTENTS IN EXCESS OF 3.25 PERCENT [J].
AMES, SL ;
HOUZE, GL ;
BITLER, WR .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (03) :1577-&